The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1988
Filed:
Sep. 26, 1985
Applicant:
Inventors:
Kazuo Maeda, Tokyo, JP;
Noboru Tokumasu, Tokyo, JP;
Toshihiko Fukuyama, Tokyo, JP;
Tsugiaki Hirata, Tokyo, JP;
Assignee:
Applied Materials Japan, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 541 ; 118 501 ;
Abstract
A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.