The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1988
Filed:
Oct. 22, 1986
John D Pollock, Rowley, MA (US);
Eclipse Ion Technology, Inc., Gloucester, MA (US);
Abstract
A high vacuum ion implantation chamber has a lower wall formed with an opening accommodating a depending sleeve through which a shaft passes supporting a substrate support platform at the top and connectable to external linear and rotary drives at the bottom. The sleeve is formed with four axially spaced annular grooves each coupled to a respective vacuum pump that maintains the annular grooves at respective pressures that progressively increase for grooves further away from the vacuum chamber bottom wall. A lowermost annular groove functions as an exhaust along with the region surrounding the shaft at the bottom of the sleeve. The sleeve also includes an air inlet. The gravity forces acting upon the shaft and platform assembly are counterbalanced by the differential pressure acting over the shaft area between the high vacuum chamber and the ambient surroundings.