The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1987
Filed:
Jul. 25, 1985
Applicant:
Inventors:
Junichi Nishizawa, Sendai-shi, Miyagi-ken, JP;
Kaoru Motoya, Sendai-shi, Miyagi-ken, JP;
Assignees:
Research Development Corp., all of, JP;
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 16 ; 357-4 ; 437133 ;
Abstract
A junction field effect transistor has a wide bandgap heterojunction gate. The source to gate spacing is less than the carrier mean free path for ballistic transport. The channel thickness is less than twice the Debye length.
Quick Actions:
Nishizawa, Junichi. (1987). Heterojunction gate ballistic jfet with channel thinner than debye length (U.S. Patent No. 4712122). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4712122
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile