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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4708783 B1

PDFFull Text
Date of Patent:
Nov. 24, 1987

Filed:

Jan. 20, 1987

Apparatus for the determination of silicon in molten metal

Applicant:
Inventors:

Hajime Nakamura, Hiroshima, JP;

Masanori Iwase, Kyoto, JP;

Eiji Ichise, Kyoto, JP;

Takaharu Moriya, Hiroshima, JP;

Shigeaki Maruhashi, Tokyo, JP;

Assignee:

Nisshin Steel Co., Ltd., Tokyo, JP;

Attorney:

Wenderoth, Lind & Ponack

Primary Examiner:

G L Kaplan

Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
204423 ;
Abstract

Use of a sensor in the electro-chemical determination of silicon dissolved in a molten metal, said sensor comprising a layer of a solid electrolyte capable of conducting oxygen ions, a reference electrode in contact with one surface of said layer of the solid electrolyte for providing a constant oxygen potential at a particular temperature of measurement, and an auxiliary electrode comprising SiO.sub.2 disposed in the immediate vicinity of the other surface of said layer of the solid electrolyte.

Find Patent Forward Citations

Nakamura, Hajime. (1987). Apparatus for the determination of silicon in molten metal (U.S. Patent No. 4708783). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4708783

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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