The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1987
Filed:
Apr. 21, 1986
Applicant:
Inventors:
John R Alvis, Austin, TX (US);
Orin W Holland, Austin, TX (US);
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 24 ; 437 14 ; 437196 ; 437247 ; 357 67 ; 148D / ;
Abstract
A technique for suppressing hillock growth in metal films on integrated circuits through multiple thermal cycles by argon implantation. Although it was known that ion implantation of many species such as arsenic suppressed the growth of hillocks in metal films through one thermal cycle, it was discovered that only one of the proposed ions, argon, would suppress hillock formation for multiple subsequent thermal cycles. For the other species, hillock formation would reoccur after multiple cycles. This characteristic is important for double layer metal (DLM) processes to prevent interlayer shorting.