The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1987
Filed:
Dec. 18, 1985
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 58 ; 357 16 ; 357-4 ;
Abstract
In a carrier injection type light emitting semiconductor device with a QW structure, a p-type impurity doped layer and/or an n-type impurity doped layer are inserted into an optical wave guide layer so as to cancel an internal electric field in an active region.
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McIlroy, Paul. (1987). Light emitting semiconductor device (U.S. Patent No. 4701774). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4701774
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