The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1987
Filed:
Oct. 19, 1984
Applicant:
Inventors:
Martin L Hammond, Cupertino, CA (US);
Charles L Ramiller, Santa Clara, CA (US);
Assignee:
Tetron, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118730 ; 118728 ; 118729 ; 118500 ; 156345 ; 156643 ;
Abstract
A basic cell for a carrier of semiconductor wafers to permit high-volume, cold wall chemical vapor deposition, including plasma-enhanced CVD. The basic cell has two surfaces, each bearing a wafer or wafers facing and tapering toward each other. Process gases are passed from the wider gap to the narrower gap between the surfaces. Basic cells may be arranged to form a circular carrier with process gases flowing inward to the center of the carrier for a high volume CVD reactor. The basic cell may also be used for plasma etching reactors.