The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1987
Filed:
May. 24, 1984
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; G01T / ;
U.S. Cl.
CPC ...
357 29 ; 357-2 ; 357 30 ; 250370 ;
Abstract
In the representative radiation detectors described in the specification, an amorphous silicon layer is grown on one or both of the opposed electrode surfaces of a single crystal silicon substrate and the amorphous silicon layer extends to the side surface of the substrate. The corresponding electrode is deposited on the amorphous silicon layer. Detectors may also be made using a single crystal of Ge, GeAs or CdTe with an amorphous layer of the same or another semiconductor material.