The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1987
Filed:
Jun. 05, 1985
Yoshishige Matsumoto, Tokyo, JP;
Naotaka Iwata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The depletion mode two-dimensional electron gas field effect transistor comprises a substantially pure semiconductor layer, an impurity doped super lattice semiconductor layer formed on the pure semiconductor layer, the energy band gaps and the electron affinities of the pure semiconductor layer and the super lattice semiconductor layer being selected to produce the two-dimensional electron gas at the surface of the pure semiconductor layer when no bias is applied to the super lattice semiconductor layer, source and drain regions formed separatedly in the super lattice semiconductor layer to reach the pure semiconductor layer, a gate electrode formed on the super lattice semiconductor layer between the source and drain regions, and large energy band gap regions formed at side portions of the gate electrode which do not face the source and drain regions, the large energy band gap regions having an energy band gap larger than the super lattice semiconductor layer and being formed by local annealing to convert the super lattice semiconductor to a mixed semiconductor.