The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 1987

Filed:

May. 20, 1985
Applicant:
Inventors:

Hifumi Tamura, Tokyo, JP;

Shigehiko Yamamoto, Saitama, JP;

Hiroyasu Shichi, Tokyo, JP;

Toru Ishitani, Saitama, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
250309 ; 250306 ;
Abstract

The surface of a specimen such as a semiconductor wafer is processed and analyzed by the irradiator of the surface with an ion beam. The zone of the specimen to be processed and analyzed is kept by heating at a temperature higher than the melting point of an element or compound forming the ion species used for the irradiation. The means used for this heating may be an electron beam source, a light source, a resistance heating source, or a high-frequency heating source.


Find Patent Forward Citations

Tamura, Hifumi. (1987). Ion beam apparatus (U.S. Patent No. 4687930). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4687930

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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