The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 1987

Filed:

Oct. 31, 1985
Applicant:
Inventors:

John J Donelon, Mahopac, NY (US);

Yaffa Tomkiewicz, Scarsdale, NY (US);

Thomas A Wassick, Wappingers Falls, NY (US);

James T Yeh, Katonah, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
156643 ;
Abstract

A differential material removal process wherein a selected material can be rapidly removed without adverse impact to surrounding layers of different materials. Ultraviolet radiation is used to selectively remove metal without adversely harming adjacent polymer layers, in a metal-polymer multilayer structure. The wavelength (100-400 nm) of the ultraviolet radiation and the energy fluence per pulse are selected so that the removal rate of metal due to thermal processes is significantly greater than the removal rate of the polymer by ablative photodecomposition. This can occur at an energy fluence per pulse level greater than that at which the etch rate of the polymer begins to level off. For example, copper of a thickness less than 5 microns is rapidly etched in one or two pulses while adjacent polyimide layers are substantially unetched by the application of ultraviolet pulses of wave-lengths 248-351 nm, at energy fluences per pulse in excess of approximately 3 or 4 J/cm.sup.2.


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