The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1987
Filed:
Jun. 29, 1981
Applicant:
Inventor:
Sidney I Soclof, San Gabriel, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01J / ;
U.S. Cl.
CPC ...
313537 ; 313495 ; 313529 ; 357 13 ;
Abstract
A vacuum electron device including a semiconductor device in a hermetically sealed container enclosing a vacuum. The device includes an electron emissive source for emitting electrons into the vacuum, and a collector for collecting electrons emitted from the electron emissive source and tranported through the vacuum. The device is subjected to a high internal electric field such that electrons in the emissive source are excited to energies greater than the electron affinity of the semiconductor body.
Soclof, Sidney. (1987). Silicon vacuum electron devices (U.S. Patent No. 4683399). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4683399
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile