The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1987
Filed:
Nov. 19, 1985
Applicant:
Inventors:
Kazuyuki Tomita, Osaka, JP;
Masuo Tanno, Hirakata, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156653 ; 156657 ; 1566591 ; 156662 ; 20419235 ; 252 791 ; 427 38 ;
Abstract
A dry-etching method for etching materials of the silicon group comprises: providing the material to be etched in a reaction chamber; supplying a mixed gas as the etching gas comprising carbon fluoride, oxygen and another gas wherein the other gas is a partially halogenated hydrocarbon; and thereafter subjecting the etching gas to high frequency electric current so as to make the mixed gas into a plasma whereby the material is etched.