The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1987
Filed:
May. 23, 1986
Brian L Corrie, Gaston, OR (US);
Pauline Benn, Beaverton, OR (US);
Michael J McElevey, Tigard, OR (US);
Tektronix, Inc., Beaverton, OR (US);
Abstract
A self aligned, nonoverlapping gate structure for a charge coupled device is fabricated by depositing three sets of interleaved polysilicon gate electrodes. The first set of electrodes is applied in a planar form and sized to a width of about one-third the spacing of the electrodes of the first set. The second and third sets of electrodes are applied to overlap, in turn, portions of the previously applied electrodes. A thick shield layer of SiO.sub.2 is deposited and patterned atop the first and second sets of gate electrodes. After deposition of the third set of electrodes, the shield layers are removed to provide passageways extending beneath the overlapping portions of the second and third sets of electrodes. Such overlapping portions are then removed by etching through the passageways, to produce a nonoverlapping, generally planar gate structure.