The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1987
Filed:
Dec. 21, 1984
Yasushi Sawada, Kokubunji, JP;
Kiichi Ueyanagi, Kokubunji, JP;
Yoshifumi Katayama, Tokorozawa, JP;
Yasuhiro Shiraki, Hino, JP;
Makoto Morioka, Nishitama, JP;
Takao Kuroda, Kokubunji, JP;
Tomoyoshi Mishima, Shiki, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor member has a structure wherein a first semiconductor layer is held between second and third semiconductor layers which have forbidden band widths greater than a forbidden band width of the first semiconductor layer, and wherein only the second semiconductor layer which is formed on a side of the first semiconductor layer close to a substrate is doped with impurities. The semiconductor member constructs the depletion type with the first and second semiconductor layers, and the enhancement type with the first and third semiconductor layers. A semiconductor device can be properly formed in the enhancement or depletion type by selectively connecting the semiconductor layers.