The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1987
Filed:
Oct. 25, 1984
Applicant:
Inventors:
Robert Foster, San Francisco, CA (US);
David N Wang, Cupertino, CA (US);
Sasson Somekh, Redwood City, CA (US);
Dan Maydan, Los Altos Hills, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419223 ; 204298 ; 20419225 ; 20419237 ; 118723 ; 118728 ; 118 501 ; 156345 ; 156643 ; 156662 ; 427 38 ; 427 39 ; 427 47 ; 428698 ; 428702 ;
Abstract
A plasma CVD reactor and associated process use magnetic field enhancement to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films. The reacter and process are designed for automated, high-throughout, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.
Foster, Robert. (1987). Apparatus and method for magnetron-enhanced plasma-assisted chemical (U.S. Patent No. 4668365). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4668365
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile