The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 1987
Filed:
May. 17, 1985
H F Glavish, Redwood City, CA (US);
A S Denholm, Prides Crossing, MA (US);
G K Simcox, Lexington, MA (US);
Eaton Corporation, Cleveland, OH (US);
Abstract
A radio frequency (rf) ion accelerator. A beam of ions enters the accelerator with a low initial velocity. Ions are accelerated to energies on the order of 1 mev per charge state for use in deep ion implantation of semiconductor materials. The accelerator is constructed from multiple stages or cells with each cell including an accelerating electrode coupled to an rf resonant tank circuit. The phase of the tank circuit oscillation is controlled to take into account the mass, charge, and initial velocity of the ion. After traversing the multiple cells, a focused beam of ions is directed to a workpiece.