The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1987
Filed:
Jun. 28, 1985
Oliver C Wells, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An improved electron bombardment induced conductivity apparatus and method is described for charge collection imaging of semiconductor materials and devices with unprecedented resolution. This is accomplished by bombarding a very small area of the surface of a specimen with low-energy electrons rather than high-energy electrons and by physically scanning (i.e. moving) the electron source itself (rather than only the beam of electrons) with respect to the specimen. A very small area of the specimen surface is bombarded with low-energy electrons without any need to do focussing by emitting the low-energy electrons from a sharply pointed electrode positioned very close to the surface being bombarded with the low-energy electrons. Hole-electron pairs created by the electron bombardment are sensed (preferably collected by an electric field) and a measurement of the sensed number of such pairs is displayed in synchronism with the electrode scanning to produce a charge collection image of the specimen.