The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1987
Filed:
Nov. 16, 1984
Applicant:
Inventors:
Rodney H Moss, Felixstowe, GB;
Paul C Spurdens, Woodbridge, GB;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ; C23C / ;
U.S. Cl.
CPC ...
156613 ; 156614 ; 148D / ; 118719 ; 118729 ; 118730 ; 427 87 ; 4272555 ;
Abstract
A method for the growth of a semi-conductor material on a substrate by vapour phase epitaxy, comprises establishing a gas flow in each of a plurality of ducts, and moving the substrate, in a single plane of movement, from one duct to another. Suitable apparatus for use in the method comprises a plurality of ducts; apparatus for establishing a gas flow along each duct; a substrate support member, on which there may be a groove for the location of a substrate; and apparatus for moving, e.g. rotating, the support member. In use, the substrate is exposed sequentially to at least two of the gas flows, e.g. to grow GaInAs on InP.