The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 1987

Filed:

May. 03, 1985
Applicant:
Inventor:

Brymer H Chin, North Plainfield, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156624 ; 156637 ; 156651 ; 156D / ; 156D / ; 148D / ; 148D / ; 148D / ; 148173 ; 134 21 ;
Abstract

A multiple meltback procedure is described for removing gross contaminants and thermal degradation from InP-containing surfaces. Prior to LPE growth on an InP substrate, the substrate surface is brought into contact briefly (.ltorsim.1 sec) with an essentially pure In melt and is then brought into contact with a slightly undersaturated In/P melt. A similar triple meltback procedure is described for use prior to LPE growth over a mesa (e.g., in the fabrication of buried heterostructures).


Find Patent Forward Citations

Chin, Brymer. (1987). Multiple meltback procedure for lpe growth on inp (U.S. Patent No. 4662983). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4662983

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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