The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 1987

Filed:

Aug. 20, 1984
Applicant:
Inventors:

Roy K Yamanouchi, San Jose, CA (US);

Robert W Williams, San Jose, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365189 ; 365154 ;
Abstract

Each cell of a static latch implemented in MOS transistor circuitry includes an MOS transistor configured to operate a depletion mode and operably coupled to communicate an output node of the cell to an input node of the cell in absence of a control signal, to effect the latching operation. Presence of the control signal allows data to be efficiently written to the cell by enabling a transfer gate to establish a communication path for the data to the input node of the cell, while at the same time disabling the MOS transistor to terminate communication of the output node of the cell to its input node during the write operation.


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