The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1987
Filed:
Mar. 04, 1985
Applicant:
Inventor:
Teh-Yi J Chen, Santa Clara, CA (US);
Assignee:
Signetics Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 148187 ; 148188 ;
Abstract
A method for fabricating insulated gate field effect transistors in NMOS or CMOS with source and drain regions having lightly doped extensions wherein the source and drain regions are made with a self-aligned process and a device made in accordance with such a method.
Chen, Teh-Yi. (1987). Method of manufacturing an insulated gate field effect device (U.S. Patent No. 4653173). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4653173
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile