The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1987
Filed:
Jun. 04, 1986
Applicant:
Inventors:
Shinji Shimizu, Houya, JP;
Kazuhiro Komori, Kodaira, JP;
Yasunobu Kosa, Kodaira, JP;
June Sugiura, Musashino, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 2957 / ; 29591 ; 148-15 ; 148187 ;
Abstract
A semiconductor integrated circuit device and a method of manufacturing the same, wherein an MIS type memory transistor of a two-layered gate electrode structure is formed on the surface of a semiconductor substrate, and an MIS type transistor for a low voltage having a comparatively thin gate oxide film and an MIS type transistor for a high voltage having a comparatively thick gate oxide film are formed around the memory transistor.
Shimizu, Shinji. (1987). Forming memory transistors with varying gate oxide thicknesses (U.S. Patent No. 4651406). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4651406
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile