The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1987
Filed:
Jul. 29, 1985
Jan Visser, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device, in which a semiconductor substrate (1) is subjected to a surface treatment in a reactor vessel (2), through which a current (3) of a reaction gas is passed and is then pumped away by means of a mechanical pump (14) and a cooling trap (15) arranged between this pump (14) and the reactor vessel (2). The current of reaction gas (3) consists of a current (Q.sub.c) of gas condensable in the cooling trap (15) and a current (Q.sub.i) of an inert gas. According to the invention, a separate current (Q.sub.x) of an inert gas is conducted to the mechanical pump (14). This current (Q.sub.x) is practically equally as large as the current of condensable gas (Q.sub.c). Thus, a method is obtained, in which the partial pressure of the inert gas (P.sub.i) and that of the condensable gas (P.sub.c) in the reactor gas can be controlled to the optimum and separately.