The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1987
Filed:
Jul. 25, 1985
Applicant:
Inventors:
William T Lynch, Summit, NJ (US);
Thomas E Seidel, Carlsbad, CA (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D / ;
U.S. Cl.
CPC ...
204 15 ;
Abstract
Selective wet or plasma anodization is utilized for forming a relatively thick dielectric layer only at the bottoms of trenches included in DRAM and/or CMOS devices. In that way, the electrical characteristics of trenches that include bottoms having surface roughness and/or sharp or irregular corners are significantly improved. Additionally, electrically isolated capacitor structures in elongated trenches formed in DRAM devices are thereby made feasible.
Quick Actions:
Lynch, William. (1987). Forming thick dielectric at the bottoms of trenches utilized in (U.S. Patent No. 4643804). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4643804
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile