The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 1987
Filed:
Apr. 01, 1985
Applicant:
Inventors:
Stanford R Ovshinsky, Bloomfield Hills, MI (US);
Subhendu Guha, Clawson, MI (US);
Prem Nath, Rochester, MI (US);
Chi C Yang, Troy, MI (US);
Jeffrey Fournier, St. Clair Shores, MI (US);
James Kulman, Detroit, MI (US);
Assignee:
Energy Conversion Devices, Inc., Troy, MI (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K / ;
U.S. Cl.
CPC ...
25218831 ; 427 39 ; 136261 ;
Abstract
Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.