The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 1987

Filed:

Mar. 26, 1985
Applicant:
Inventors:

Yoshihiro Hamakawa, Kawanishi, JP;

Hideo Yamagishi, Kyoto, JP;

Yoshihisa Tawada, Kobe, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ;
U.S. Cl.
CPC ...
427 39 ; 427 86 ; 4272481 ; 427249 ; 427255 ; 4272551 ; 4272552 ;
Abstract

The production of a semiconductor by the glow discharge decomposition of a silane type gas is accomplished advantageously by a method which comprises effecting the glow discharge decomposition of introduced silane type gas with a plurality of opposed electrodes disposed substantially perpendicularly to a substrate and insulated from the ground potential and subsequently allowing the product of the decomposition to be deposited on the substrate disposed so as to be exposed to the introduced silane type gas. The semiconductor obtained by this method is free from the drawbacks suffered by the conventional method using a power source of high frequency.


Find Patent Forward Citations

Hamakawa, Yoshihiro. (1987). Method for production of semiconductor by glow discharge decomposition (U.S. Patent No. 4634601). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4634601

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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