The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1986
Filed:
Oct. 31, 1984
Applicant:
Inventors:
Eldon J Zorinsky, Plano, TX (US);
David B Spratt, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 2957 / ; 2957 / ; 29578 ; 29580 ; 148175 ; 148-15 ; 148D / ; 148D / ; 148D / ; 156647 ; 156649 ; 156653 ; 156657 ; 204 345 ; 2041291 ; 2041293 ;
Abstract
Full oxide isolation of epitaxial islands can be accomplished by oxidizing suitably porous silicon. The porous silicon can be created by anodizing highly doped n+ silicon in hydroflouric acid. Lesser doped epitaxial regions will not become porous and will become isolated islands suitable for the fabrication of semiconductor devices.