The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1986
Filed:
Jul. 29, 1983
Sachio Ishioka, Tokyo, JP;
Yoshinori Imamura, Hachioji, JP;
Tsuyoshi Uda, Kodaira, JP;
Yukio Takasaki, Hachioji, JP;
Chushirou Kusano, Tokorozawa, JP;
Hirofumi Ogawa, Hachioji, JP;
Tatsuo Makishima, Hachioji, JP;
Tadaaki Hirai, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A photosensor including a transparent electrode for transmitting incident light and a photoconductive layer receiving light from the transparent electrode for performing photoelectric conversion, is disclosed in which the photoconductive layer is made of amorphous silicon, the amorphous silicon contains 5 to 30 atomic percent hydrogen and is doped with at least one selected from elements belonging to the groups II and III in such a manner that a region remote from the transparent electrode is higher in the concentration of the selected element than another region proximate to the transparent electrode, and a voltage is applied across the photoconductive layer so that a surface of the photoconductive layer facing the transparent electrode is at a positive potential with respect to another surface of the photoconductive layer opposite to the surface facing the transparent electrode.