The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1986
Filed:
Sep. 25, 1985
Ikuo Nozue, Yokohama, JP;
Osahiko Tomomitsu, Yokohama, JP;
Yoshiji Yumoto, Yokohama, JP;
Yoshio Matsumura, Yokkaichi, JP;
Japan Synthetic Rubber Co., Ltd., Tokyo, JP;
Abstract
A novel raddery organopolysilsesquioxane having lower alkyl groups and alkenyl groups as the side chains and, if necessary, having aryl groups and/or hydrogen atoms bonded as the side chains can be produced by adding water to a solution of a lower-alkyltrihalogenosilane, an alkenyltrihalogenosilane, and, if necessary, an aryltrihalogenosilane and/or a trihalogenosilane in an organic solvent, and heating the resulting mixture. The aforesaid organopolysilsesquioxane can be used for forming a patterned surface-protecting layer or insulating layer for a semiconductor device, in the form of a mixture with a compound which generates crosslinking-reaction-active species upon irradiation with light or an ionizing radiation.