The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1986
Filed:
Apr. 24, 1984
Applicant:
Inventors:
Akira Suzuki, Nara, JP;
Katsuki Furukawa, Tenri, JP;
Yoshiyuki Higashigaki, Tenri, JP;
Shigeo Harada, Isehara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156613 ; 156D / ;
Abstract
A method of fabricating SiC single-crystal substrate having a large area and a high quality which is suited to mass production, said method comprises covering the surface of a silicon substrate with a uniform thin film of silicon carbide grown by the CVD method at a low temperature, and thereafter growing a single-crystal film of silicon carbide on the thin film by the CVD method at a higher temperature than in the preceeding step.