The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1986
Filed:
Jun. 03, 1985
Applicant:
Inventors:
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 29591 ; 148-15 ; 148187 ;
Abstract
Gate current leakage is reduced in a submicron FET device by the deposition of an oxide layer over the gate prior to the rapid heating of the device. This is done to prevent the dopant that was implanted into the gate from collecting on the sidewalls of the gate and the oxide layer between gate and substrate. Otherwise the diffused dopant becomes the path of least resistance, thus creating current leakage from the gate to source or gate to drain.