The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 1986
Filed:
Sep. 28, 1984
Applicant:
Inventors:
Robert H Havemann, Garland, TX (US);
Vernon R Porter, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 2957 / ; 148-15 ; 148175 ; 148187 ; 148D / ; 357 91 ;
Abstract
Optical illumination rather than furnace heating is used to drive in MOSFET source and drain diffusions, preferably using a surface layer of antimony as the dopant source. This results in substantially less overlap between the gate and the source and drain diffusions. Similarly, if the present invention is practiced in a process having gate sidewalls less than zero overlap can be achieved.