The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 1986
Filed:
Oct. 15, 1985
Applicant:
Inventors:
Leopoldo D Yau, Durham, OR (US);
Robert A Gasser, Jr, Cornelius, OR (US);
Kenneth R Week, Jr, Sherwood, OR (US);
Jick M Yu, Beaverton, OR (US);
David D Chin, Aloha, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; G03C / ;
U.S. Cl.
CPC ...
427 93 ; 427 94 ;
Abstract
A process for the reduction of defect formation in conductive layers of semiconductor bodies during patterning, alloying and passivation. A film of low temperature spin-on-glass containing dye is formed on the conductive layer prior to patterning and any high temperature process greater than 200 degrees C. Hermetic passivation is achieved by depositing on the conductive layer a composite film consisting of a lower, tensile layer and an upper, compressive layer with the net force of the passivation film being tensile.