The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 1986
Filed:
Nov. 14, 1984
Takashi Shinohe, Kawasaki, JP;
Masayuki Asaka, Miura, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A gate turn-off thyristor has a first emitter layer having a P.sup.+ P.sup.- emitter structure which is in contact with an anode electrode and a second emitter layer having an N-type multi-emitter structure which is in contact with cathode electrodes. To reduce power dissipation in the turn-off process, the first emitter layer mainly consists of low impurity concentration regions, and each high impurity concentration region is formed to have a substantially uniform width and to surround the low impurity concentration region formed within a region of the first emitter layer immediately below one of the emitter strips of the second emitter layer.