The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 1986

Filed:

Jan. 24, 1984
Applicant:
Inventors:

Graham J Siddall, Woodside, CA (US);

Steven G Eaton, Palo Alto, CA (US);

James B Kruger, Half Moon Bay, CA (US);

Garrett A Garrettson, Los Altos Hills, CA (US);

Armand P Neukermans, Palo Alto, CA (US);

Assignee:

Varian Associates, Inc., Palo Alto, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K / ;
U.S. Cl.
CPC ...
378 34 ; 2504921 ;
Abstract

An X-ray lithography apparatus permits the successive exposure of each of four quadrants of a semiconductor wafer through a single mask. The mask overlays one quadrant of the wafer at a time and the wafer is rotated through 90 degrees after exposure of a quadrant to allow exposure of succeeding wafer quadrants; each wafer quadrant is independently aligned to the mask prior to exposure. In an alternative preferred embodiment, a rotatable diaphragm is used to select a single mask quadrant from a mask which overlays the entire surface of the semiconductor wafer. Both the wafer and the diaphragm may be rotated to allow various exposure combinations of mask and wafer quadrants.


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