The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 1986

Filed:

Mar. 14, 1985
Applicant:
Inventors:

Yoshifumi Katayama, Tokorozawa, JP;

Toshikazu Shimada, Tokyo, JP;

Eiichi Maruyama, Kodaira, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 136258 ; 357 59 ; 427 39 ; 427 74 ; 427 86 ;
Abstract

A semiconductor device includes a polycrystalline semiconductor film body having at least one element selected from a group consisting of hydrogen, fluorine, chlorine, bromine, iodine, lithium, sodium, potassium, rubidium, and cesium included mainly around grain boundaries of the polycrystalline semiconductor film. The simultaneous inclusion of one of the halogen elements and one of the monovalent metal elements of the group described above is more effective to quench charges of the elements included. The content of the elements included is up to 40% by atomic ratio. As a result, the electronic characteristic of the polycrystalline semiconductor film are substantially improved.


Find Patent Forward Citations

Katayama, Yoshifumi. (1986). Method of forming passivated polycrystalline semiconductors (U.S. Patent No. 4613382). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4613382

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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