The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 1986
Filed:
Apr. 12, 1984
Kazunori Imaoka, Komae, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A variety of methods are applicable to production of semiconductor devices in which the active layer is produced in a denuded zone which is thin and free of defects. This denuded zone in combination with a high concentration of crystalline defects contained in a deep layer of the semiconductor device, allows the semiconductor device to enjoy the function of the intrinsic gettering effect. A variety of improvements, including a decrease in the overall production time, removal of limitations due to the oxygen concentration of a wafer, etc. is realized by introducing an idea that the annealing temperature is increased and/or decreased gradually at a predetermined rate. A variety of such improved annealing processes being combined with each other and/or to a variety of conventional annealing processes, aiming at a higher magnitude of the intrinsic gettering effect. This improvement is further modified to be combined with epitaxy to diversify the uses of a denuded zone.