The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 1986

Filed:

Jul. 23, 1985
Applicant:
Inventors:

Rudolph H Dyck, Palo Alto, CA (US);

James M Early, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 24 ; 357 30 ;
Abstract

A self-aligned element antiblooming structure for application to charge-coupled devices includes a region in the substrate in which the charge-coupled device is fabricated into which both a P and N conductivity type impurity are introduced. By introducing impurities of different diffusivities, a sink region is created between two very narrow antiblooming barriers. Using appropriate process controls, the potential height of the antiblooming barriers may be adjusted to drain excess charge accumulating in the substrate adjacent the antiblooming barriers. In this manner the antiblooming function is accomplished using only a minimal area of the substrate. The invention is applicable to charge-coupled devices utilizing a variety of different clocking schemes, and to charge-coupled device image sensors using buried channels.


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