The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 1986
Filed:
Sep. 08, 1983
Applicant:
Inventors:
Claude L Bertin, South Burlington, VT (US);
Harish N Kotecha, Manassas, VA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365104 ; 365100 ;
Abstract
A resistor personalized memory cell consisting of a resistive gate field effect transistor. One end of the gate electrode is connected to the memory cell access line, the other end to one of its source or drain regions. The source or drain region not connected to the gate electrode is connected to the memory cell bit line. Memory cell personalization is accomplished by selecting the resistance of the resistive gate. Memory cell data is read by detecting the current flow through the cell, the magnitude of the current flow being proportional to the gate resistance.