The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 1986

Filed:

Jul. 11, 1983
Applicant:
Inventors:

Mitsugu Enomoto, Tanashi, JP;

Yoji Yoshikawa, Tanashi, JP;

Masao Koshi, Sayama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
2041 / ; 118715 ; 204298 ; 427 38 ;
Abstract

A method of sensing the amount of a thin film deposited during an ion plating process, based upon either fixing the value of voltage applied to a plasma-generating probe and measuring the current which flows through the probe into the plasma, this current varying in proportion to the rate of formation of the thin film, or fixing the level of current which flows through the probe into the plasma at a fixed value and measuring the voltage which develops at the probe, this voltage varying in proportion to the rate of formation of the thin film. The results of such measurement can be used to control the thickness of a deposited thin film to a desired value.


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