The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1986
Filed:
May. 15, 1984
Applicant:
Inventors:
Naoki Yamamoto, Kawaguchi, JP;
Noriyuki Sakudo, Ohme, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; C23F / ;
U.S. Cl.
CPC ...
2957 / ; 29571 ; 29578 ; 148-15 ; 148187 ; 148D / ; 357 91 ; 427 88 ;
Abstract
A silicide layer or silicon alloy layer is formed within a surface region of an impurity-doped region on the surface of a semiconductor substrate by implanting and heating any of those metals which can form silicides or silicon alloys with silicon upon heating. The peel of a metallic electrode or wiring can thus be prevented, and the electrode or wiring can be directly formed on the semiconductor substrate.