The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 1986
Filed:
Apr. 16, 1985
Applicant:
Inventor:
Seiichi Iwamatsu, Suwa, JP;
Assignee:
Kabushiki Kaisha Suwa Seikosha, Nagano, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
428156 ; 2957 / ; 2957 / ; 29580 ; 156603 ; 156649 ; 156653 ; 156657 ; 156662 ; 357 49 ; 357 56 ; 427 86 ; 428192 ; 428446 ; 428620 ;
Abstract
A semiconductor substrate including a single-crystal mono-crystalline film on an insulating film and methods of fabrication are provided. The insulating film has an opening to expose the single-crystal material to a polycrystalline or amorphous semiconductor layer on the insulating film for growing mono-crystals upon application of heat slightly less than the melting point of the semiconductor and applying an energy beam, such as an electron beam or light beam to the semiconductor film. The semiconductor-insulator-semiconductor provides improved substitutes for Silicon On Sapphire formed by the epitaxial method.