The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1986
Filed:
May. 02, 1983
Robert L Berry, San Mateo, CA (US);
Fairchild Camera & Instrument Corporation, Mountain View, CA (US);
Abstract
A method of defining narrow regions in an underlying integrated circuit structure includes the steps of depositing a first layer of material 30 having selected etching characteristics on the underlying integrated circuit structure, depositing a second layer of material 32 having etching characteristics different from the first layer 30 on the first layer 30, anisotropically etching the first layer 30 and the second layer 32 from all of the underlying integrated circuit structure 26 except for a desired region having a periphery which includes the narrow region, forming a coating 35 of smoothing material over all of the underlying integrated circuit structure 26 except for the first layer 30, and isotropically etching the first layer 30 to remove it from the surface of the underlying integrated circuit structure 26 to thereby define the narrow region 36. Use of the process to fabricate a compact bipolar transistor structure is also disclosed.