The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 1986

Filed:

May. 14, 1984
Applicant:
Inventors:

Arunava Gupta, Madison, NJ (US);

Gary A West, Dover, NJ (US);

Karl W Beeson, Princeton, NJ (US);

Assignee:

Allied Corporation, Morris Township, Morris County, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ;
U.S. Cl.
CPC ...
427 531 ; 20415741 ; 427 93 ; 4272552 ; 428689 ;
Abstract

Conductive titanium silicide-containing films and composites comprising substrates and the film are produced by light induced chemical vapor deposition. The process eliminates the need to anneal the silicide film in order to produce a conductive film and overcomes the problem of substrate damage associated with high temperature deposition processes. The process comprises the steps of: exposing gas phase reactants comprising a titanium halide and a silicon containing compound to high intensity light; exposing a preheated substrate to the exposed gases to cause a conductive titanium silicide film to be formed thereon; and, maintaining the substrate, throughout the process, at a temperature below that temperature which would induce a thermal reaction between the gas phase reactants. The films and composites produced by the process are particularly suited for use in VLSI and VVLSI production.


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