The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1986
Filed:
Dec. 30, 1983
Applicant:
Inventors:
Edward C Fredericks, Haymarket, VA (US);
Harish N Kotecha, Manassas, VA (US);
Assignee:
IBM Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F / ; G03F / ;
U.S. Cl.
CPC ...
430312 ; 430 22 ; 430156 ; 430315 ; 430317 ; 430318 ; 430323 ; 430324 ; 430325 ; 430326 ; 430329 ;
Abstract
A method making self-aligned semiconductors utilizing two resist masking steps to form a device; making one of the masks insoluable with respect to the other so that when a first part of the device is formed by a first mask, and a second part of the device is formed by the second masks, the parts are self-aligned when the first resist is dissolved.