The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1985
Filed:
Nov. 02, 1984
Applicant:
Inventors:
Yvon Gris, Tullins, FR;
Agustin Monroy, St. Martin d'Heres, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 2957 / ; 29580 ; 156646 ; 156648 ; 156649 ; 156651 ; 156653 ; 156657 ; 156662 ; 357 49 ; 427 93 ;
Abstract
A method for manufacturing integrated circuits is provided in which monocrystalline silicon islets are formed completely isolated from the substrate itself made from monocrystalline silicon, by a thick oxide layer. This thick oxide layer is formed in the following way: silicon islets are formed whose top and sides are protected with silicon nitride. Then the silicon is etched isotropically, which hollows out deeply under the islets. Thick oxidization then makes up the whole of the silicon under the islets. Thus isolated silicon islets are obtained of the same crystalline quality as the substrate.