The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 1985
Filed:
Sep. 16, 1983
Applicant:
Inventors:
Chung P Wu, Hamilton Township, Mercer County, NJ (US);
Frank Kolondra, Delaware Township, Hunterdon County, NJ (US);
Assignee:
RCA Corporation, Princeton, NJ (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K / ;
U.S. Cl.
CPC ...
2504922 ; 250281 ; 2504 / ;
Abstract
An ion implantation apparatus and method are disclosed for reducing contamination of doubly-charged ions by singly-charged ions. A liner, with a grooved or smooth surface, formed of beryllium or graphite reduces secondary electron scattering into the ion beam. Solid red phosphorus reduces the operating vacuum thereby reducing contamination.
Wu, Chung. (1985). Method and apparatus for implantation of doubly-charged ions (U.S. Patent No. 4560879). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4560879
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile