The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 1985

Filed:

Aug. 29, 1983
Applicant:
Inventors:

Mineo Gotou, Kawasaki, JP;

Ryoichi Yoshikawa, Yokohama, JP;

Toru Tojo, Yamato, JP;

Hirotsugu Wada, Machida, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B / ; G03F / ;
U.S. Cl.
CPC ...
2504911 ; 2504421 ;
Abstract

Disclosed is a method for measuring the position of a silicon wafer as a workpiece to be exposed. The method is suitably used in an electron beam exposure system. A wafer has a plurality of chip alignment marks which respectively designate a plurality of chip field areas, included in a dicing line area. When the wafer is contained ion a holder and is fixed in the exposure system, edge portions of the wafer are partially scanned with the electron beam to roughly measure the position of the wafer. In accordance with this wafer position data, a wafer surface portion required for detecting only the marks is defined within the dicing line area. In the mark detection with the electron beam, the electron beam irradiates only the defined wafer surface portion of the wafer surface, thereby providing highly precise measurement of the wafer position and avoiding undesirable irritation of the circuit formation area.


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