The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 1985

Filed:

Apr. 17, 1984
Applicant:
Inventors:

Steven J Hillenius, Bethlehem, PA (US);

Louis C Parrillo, Warren, NJ (US);

Assignee:

AT&T Bell Laboratories, Murray Hill, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 2957 / ; 29578 ; 148-15 ; 148187 ; 148190 ; 148191 ; 148D / ; 148D / ; 148D / ; 357 2311 ; 357 2312 ; 357 42 ; 357 52 ;
Abstract

To minimize the number of independent masking operations in the manufacture of a CMOS integrated circuit device using twin tub technology, the n-tub is made by separate phosphorus and arsenic implants through a common mask, and the p-tub is made by two separate boron implants through a common mask, complementary to that used for forming the n-tub. One of the boron implants occurs before, the other after, the drive-in heating step. After tub formation, further movement of the implanted ions is kept small by use of a high pressure process for growing the field oxide and by only limited further heating. Transistors are then formed in the tubs.


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